Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Rds On (Max) @ Id, Vgs 300 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 34.8nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 800mW
Mounting Type -
Package / Case -