Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8.8A (Tc)
Rds On (Max) @ Id, Vgs 195 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 34.8nC @ 10V
Input Capacitance (Ciss) @ Vds 1055pF @ 50V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63