1V @ 250µA,Vgs(th) (Max) @ Id
33nC @ 5V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF7811WTR INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 14A (Ta) 12 mOhm @ 15A, 4.5V 1V @ 250µA 33nC @ 5V 2335pF @ 16V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7811WTRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 14A (Ta) 12 mOhm @ 15A, 4.5V 1V @ 250µA 33nC @ 5V 2335pF @ 16V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7811WPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 14A (Ta) 12 mOhm @ 15A, 4.5V 1V @ 250µA 33nC @ 5V 2335pF @ 16V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7811WGTRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 14A (Ta) 12 mOhm @ 15A, 4.5V 1V @ 250µA 33nC @ 5V 2335pF @ 16V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI8424DB-T1-E1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 12.2A (Tc) 31 mOhm @ 1A, 4.5V 1V @ 250µA 33nC @ 5V 1950pF @ 4V 6.25W Surface Mount 4-XFBGA, CSPBGA
SI6410DQ-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 7.8A (Ta) 14 mOhm @ 7.8A, 10V 1V @ 250µA 33nC @ 5V - 1.5W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6410DQ-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 7.8A (Ta) 14 mOhm @ 7.8A, 10V 1V @ 250µA 33nC @ 5V - 1.5W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI8404DB-T1-E1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 12.2A (Tc) 31 mOhm @ 1A, 4.5V 1V @ 250µA 33nC @ 5V 1950pF @ 4V 6.25W Surface Mount 4-XFBGA, CSPBGA