MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:3.1W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Max:150°C;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Rds On (Max) @ Id, Vgs 12 mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 33nC @ 5V
Input Capacitance (Ciss) @ Vds 2335pF @ 16V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)