Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 12.2A (Tc)
Rds On (Max) @ Id, Vgs 31 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 33nC @ 5V
Input Capacitance (Ciss) @ Vds 1950pF @ 4V
Power - Max 6.25W
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA