60V,Drain to Source Voltage (Vdss)
18nC @ 10V,Gate Charge (Qg) @ Vgs
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDC5612 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 4.3A (Ta) 55 mOhm @ 4.3A, 10V 4V @ 250µA 18nC @ 10V 650pF @ 25V 800mW Surface Mount SOT-23-6 Thin, TSOT-23-6
FDS4559 FAIRCHILD SEMICONDUCTOR CORP
N and P-Channel 60V 4.5A, 3.5A 55 mOhm @ 4.5A, 10V 3V @ 250µA 18nC @ 10V 650pF @ 25V 1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
RSD150N06TL ROHM CO LTD
MOSFET N-Channel, Metal Oxide 60V 15A 40 mOhm @ 15A, 10V 3V @ 1mA 18nC @ 10V 930pF @ 10V 20W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STP20NF06 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 20A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 18nC @ 10V 400pF @ 25V 60W Through Hole TO-220-3
FDC5612_F095 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 4.3A (Ta) 55 mOhm @ 4.3A, 10V 4V @ 250µA 18nC @ 10V 650pF @ 25V 800mW Surface Mount SOT-23-6 Thin, TSOT-23-6
STF20NF06 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 60V 20A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 18nC @ 10V 400pF @ 25V 28W Through Hole TO-220-3 Full Pack
CSD18537NQ5A TEXAS INSTRUMENTS INC
MOSFET N-Channel, Metal Oxide 60V 11A (Ta), 50A (Tc) 13 mOhm @ 12A, 10V 3.5V @ 250µA 18nC @ 10V 1480pF @ 30V 3.2W Surface Mount 8-TDFN
CSD18537NKCS TEXAS INSTRUMENTS INC
MOSFET N-Channel, Metal Oxide 60V 50A 14 mOhm @ 25A, 10V 3.5V @ 250µA 18nC @ 10V 1480pF @ 30V 79W Through Hole TO-220-3
CSD88537ND TEXAS INSTRUMENTS INC
2 N-Channel (Half Bridge) 60V 15A (Ta) 15 mOhm @ 8A, 10V 3.6V @ 250µA 18nC @ 10V 1400pF @ 30V 2.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
TK20S06K3L(T6L1,NQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 20A (Ta) 29 mOhm @ 10A, 10V 3V @ 1mA 18nC @ 10V 780pF @ 10V 38W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63