MOSFET, N, SUPERSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; Operating Temperatur
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Rds On (Max) @ Id, Vgs 55 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) @ Vds 650pF @ 25V
Power - Max 800mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Buying Option 1
1
-
INR 544.12
10
-
INR 424.56
100
-
INR 273.89
1000
-
INR 219.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 544.12
Buying Option 2
1
-
INR 542.9
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 542.9