Specification
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Rds On (Max) @ Id, Vgs 15 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 30V
Power - Max 2.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)