BUZ11_NR4941 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
50V
|
30A (Tc)
|
40 mOhm @ 15A, 10V
|
4V @ 1mA
|
-
|
2000pF @ 25V
|
75W
|
Through Hole
|
TO-220-3
|
CMF20120D |
CREE INC |
|
SiCFET N-Channel, Silicon Carbide
|
1200V (1.2kV)
|
42A (Tc)
|
110 mOhm @ 20A, 20V
|
4V @ 1mA
|
90.8nC @ 20V
|
1915pF @ 800V
|
150W
|
Through Hole
|
TO-247-3
|
BUZ11_R4941 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
50V
|
30A (Tc)
|
40 mOhm @ 15A, 10V
|
4V @ 1mA
|
-
|
2000pF @ 25V
|
75W
|
Through Hole
|
TO-220-3
|
SPB18P06P G |
INFINEON TECHNOLOGIES AG |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.7A (Ta)
|
130 mOhm @ 13.2A, 10V
|
4V @ 1mA
|
28nC @ 10V
|
860pF @ 25V
|
81.1W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
BSO613SPV G |
INFINEON TECHNOLOGIES AG |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
3.44A
|
130 mOhm @ 3.44A, 10V
|
4V @ 1mA
|
30nC @ 10V
|
875pF @ 25V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SPD07N20 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
200V
|
7A
|
400 mOhm @ 4.5A, 10V
|
4V @ 1mA
|
31.5nC @ 10V
|
530pF @ 25V
|
40W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
SPD18P06P G |
INFINEON TECHNOLOGIES AG |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.6A
|
130 mOhm @ 13.2A, 10V
|
4V @ 1mA
|
33nC @ 10V
|
860pF @ 25V
|
80W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
BUZ31 H3045A |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
200V
|
14.5A
|
200 mOhm @ 9A, 10V
|
4V @ 1mA
|
-
|
1120pF @ 25V
|
95W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
BUZ30A H3045A |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
200V
|
21A (Tc)
|
130 mOhm @ 13.5A, 10V
|
4V @ 1mA
|
-
|
1900pF @ 25V
|
125W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
SPP18P06P H |
INFINEON TECHNOLOGIES AG |
|
MOSFET P-Channel, Metal Oxide
|
60V
|
18.7A (Ta)
|
130 mOhm @ 13.2A, 10V
|
4V @ 1mA
|
28nC @ 10V
|
860pF @ 25V
|
81.1W
|
Through Hole
|
TO-220-3
|