SMALL SIGNAL+P-CH; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.7V; Power Dissipation Pd:81.1W; Transistor Case Style:TO-220; No. of Pins:3; Operating Temperat
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 18.7A (Ta)
Rds On (Max) @ Id, Vgs 130 mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) @ Vds 860pF @ 25V
Power - Max 81.1W
Mounting Type Through Hole
Package / Case TO-220-3