| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK56E12N1,S1X | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 120V | 56A (Ta) | 7 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | 168W | Through Hole | TO-220-3 | |
| IPP147N12N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 107W | Through Hole | TO-220-3 | |
| IPI147N12N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 107W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRF9204PBF | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 40V | 56A (Ta) | 16 mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | 7676pF @ 25V | 143W | Through Hole | TO-220-3 | |
| BUK9614-60E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 56A (Ta) | 12.8 mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5nC @ 5V | 2651pF @ 25V | 96W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| CSD16411Q3/2801 | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 25V | 56A (Ta) | 15 mOhm @ 10A, 4.5V | 2.3V @ 250µA | 3.8nC @ 4.5V | 570pF @ 12.5V | 2.7W | Surface Mount | 8-TDFN Exposed Pad | |
| TPCA8055-H,LQ(M | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 56A (Ta) | 1.9 mOhm @ 28A, 10V | 2.3V @ 1mA | 91nC @ 10V | 7700pF @ 10V | 70W | Surface Mount | 8-PowerVDFN |
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