Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 56A (Ta)
Rds On (Max) @ Id, Vgs 16 mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 3V @ 100µA
Gate Charge (Qg) @ Vgs 224nC @ 10V
Input Capacitance (Ciss) @ Vds 7676pF @ 25V
Power - Max 143W
Mounting Type Through Hole
Package / Case TO-220-3