Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 56A (Ta)
Rds On (Max) @ Id, Vgs 15 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) @ Vgs 3.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 570pF @ 12.5V
Power - Max 2.7W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad