| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQP50N06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 50A | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 120W | Through Hole | TO-220-3 | |
| PSMN015-60PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 50A | 14.8 mOhm @ 15A, 10V | 4V @ 1mA | 20.9nC @ 10V | 1220pF @ 30V | 86W | Through Hole | TO-220-3 | |
| PSMN017-80PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 50A | 17 mOhm @ 10A, 10V | 4V @ 1mA | 26nC @ 10V | 1573pF @ 40V | 103W | Through Hole | TO-220-3 | |
| PSMN035-150P,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 150V | 50A | 35 mOhm @ 25A, 10V | 4V @ 1mA | 79nC @ 10V | 4720pF @ 25V | 250W | Through Hole | TO-220-3 | |
| RJK1003DPN-E0#T2 | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 100V | 50A | 11 mOhm @ 25A, 10V | - | 59nC @ 10V | 4150pF @ 10V | 125W | - | TO-220-3 | |
| CSD18537NKCS | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 60V | 50A | 14 mOhm @ 25A, 10V | 3.5V @ 250µA | 18nC @ 10V | 1480pF @ 30V | 79W | Through Hole | TO-220-3 | |
| TK50E08K3,S1X(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 75V | 50A | 12 mOhm @ 25A, 10V | - | 55nC @ 10V | - | 104W | Through Hole | TO-220-3 | |
| TK50E06K3A,S1X(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 50A | 8.5 mOhm @ 25A, 10V | - | 54nC @ 10V | - | 104W | Through Hole | TO-220-3 |
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