PSMN01 Series 80 V 17 mO N-Channel TrenchMOS Transistor - TO220AB
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 50A
Rds On (Max) @ Id, Vgs 17 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1573pF @ 40V
Power - Max 103W
Mounting Type Through Hole
Package / Case TO-220-3