Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 50A
Rds On (Max) @ Id, Vgs 11 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 59nC @ 10V
Input Capacitance (Ciss) @ Vds 4150pF @ 10V
Power - Max 125W
Mounting Type -
Package / Case TO-220-3