MOSFET P-Channel, Metal Oxide,FET Type
170mA (Ta),Current - Continuous Drain (Id) @ 25°C
170mA (Ta),Current - Continuous Drain (Id) @ 25°C
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSS84P-E6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSS84P E6433 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSS84P L6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSS84P L6433 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSS84P H6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 170mA (Ta) 8 Ohm @ 170mA, 10V 2V @ 20µA 1.5nC @ 10V 19pF @ 25V 360mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSP304A,126 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 300V 170mA (Ta) 17 Ohm @ 170mA, 10V 2.55V @ 1mA - 90pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads