Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Rds On (Max) @ Id, Vgs 8 Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) @ Vgs 1.5nC @ 10V
Input Capacitance (Ciss) @ Vds 19pF @ 25V
Power - Max 360mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3