Manufacture :NXP SEMICONDUCTORS
30V,Drain to Source Voltage (Vdss)
11nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PMXB65ENE NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 3.2A (Ta) 67 mOhm @ 3.2A, 10V 2.5V @ 250µA 11nC @ 10V 295pF @ 15V 400mW Surface Mount 3-XFDFN Exposed Pad
PMT29EN,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 820mW Surface Mount TO-261-4, TO-261AA
PMXB120EPE NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 30V 2.4A (Ta) 120 mOhm @ 2.4A, 10V 2.5V @ 250µA 11nC @ 10V 309pF @ 15V 400mW Surface Mount 3-XFDFN Exposed Pad
PMT29EN,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 820mW Surface Mount TO-261-4, TO-261AA