Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Rds On (Max) @ Id, Vgs 120 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 309pF @ 15V
Power - Max 400mW
Mounting Type Surface Mount
Package / Case 3-XFDFN Exposed Pad