Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Rds On (Max) @ Id, Vgs 67 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 295pF @ 15V
Power - Max 400mW
Mounting Type Surface Mount
Package / Case 3-XFDFN Exposed Pad