Manufacture :NXP SEMICONDUCTORS
200V,Drain to Source Voltage (Vdss)
-,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSP220,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 200V 225mA (Ta) 12 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP122,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 550mA 2.5 Ohm @ 750mA, 10V 2V @ 1mA - 100pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BS108,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BS108/01,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSS87,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 400mA (Ta) 3 Ohm @ 400mA, 10V 2.8V @ 1mA - 120pF @ 25V 1W Surface Mount TO-243AA