MOSFET, N CH, 200V, 400MA, SOT-89; Transistor Polarity:N Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:1W; Transistor Case Style:SOT-89; No. of Pins:3; Operating Te
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
Rds On (Max) @ Id, Vgs 3 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-243AA