2.9A (Ta),Current - Continuous Drain (Id) @ 25°C
Die,Package / Case
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
EPC8005ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2.9A (Ta) 275 mOhm @ 500mA, 5V 2.5V @ 250µA 0.218nC @ 32.5V 29pF @ 32.5V - Surface Mount Die
EPC8005TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2.9A (Ta) 275 mOhm @ 500mA, 5V 2.5V @ 250µA 0.218nC @ 32.5V 29pF @ 32.5V - Surface Mount Die