FETs -Single, Arrays and Modules,65V,2.9A (Ta)
Specification
FET Type GaNFET N-Channel, Gallium Nitride
Drain to Source Voltage (Vdss) 65V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Rds On (Max) @ Id, Vgs 275 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 0.218nC @ 32.5V
Input Capacitance (Ciss) @ Vds 29pF @ 32.5V
Power - Max -
Mounting Type Surface Mount
Package / Case Die