FET Type | GaNFET N-Channel, Gallium Nitride |
Drain to Source Voltage (Vdss) | 65V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
Rds On (Max) @ Id, Vgs | 275 mOhm @ 500mA, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) @ Vgs | 0.218nC @ 32.5V |
Input Capacitance (Ciss) @ Vds | 29pF @ 32.5V |
Power - Max | - |
Mounting Type | Surface Mount |
Package / Case | Die |