65V,Drain to Source Voltage (Vdss)
65V,Drain to Source Voltage (Vdss)
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTA28P065T IXYS CORP
MOSFET P-Channel, Metal Oxide 65V 28A (Tc) 45 mOhm @ 14A, 10V 4.5V @ 250µA 46nC @ 10V 2030pF @ 25V 83W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP28P065T IXYS CORP
MOSFET P-Channel, Metal Oxide 65V 28A (Tc) 45 mOhm @ 14A, 10V 4.5V @ 250µA 46nC @ 10V 2030pF @ 25V 83W Through Hole TO-220-3
IXTP130N065T2 IXYS CORP
MOSFET N-Channel, Metal Oxide 65V 130A (Tc) 6.6 mOhm @ 50A, 10V 4V @ 250µA 79nC @ 10V 4800pF @ 25V 250W Through Hole TO-220-3
EPC8005ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2.9A (Ta) 275 mOhm @ 500mA, 5V 2.5V @ 250µA 0.218nC @ 32.5V 29pF @ 32.5V - Surface Mount Die
EPC8009ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 4.1A (Ta) 138 mOhm @ 500mA, 5V 2.5V @ 250µA 0.380nC @ 32.5V 47pF @ 32.5V - Surface Mount Die
EPC8002ENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2A (Ta) 530 mOhm @ 500mA, 5V 2.5V @ 250µA - 21pF @ 32.5V - Surface Mount Die
EPC8009TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 4.1A (Tc) 138 mOhm @ 500mA, 5V 2.5V @ 250µA 0.380nC @ 32.5V 47pF @ 32.5V - Surface Mount Die
EPC8005TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2.9A (Ta) 275 mOhm @ 500mA, 5V 2.5V @ 250µA 0.218nC @ 32.5V 29pF @ 32.5V - Surface Mount Die
EPC8002TENGR EPCOS AG
GaNFET N-Channel, Gallium Nitride 65V 2A (Ta) 530 mOhm @ 500mA, 5V 2.5V @ 250µA 0.141nC @ 32.5V 21pF @ 32.5V - Surface Mount Die
IXTA130N065T2 IXYS CORP
MOSFET N-Channel, Metal Oxide 65V 130A (Tc) 6.6 mOhm @ 50A, 10V 4V @ 250µA 79nC @ 10V 4800pF @ 25V 250W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB