| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EPC8005ENGR | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 65V | 2.9A (Ta) | 275 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.218nC @ 32.5V | 29pF @ 32.5V | - | Surface Mount | Die | |
| EPC8009ENGR | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 65V | 4.1A (Ta) | 138 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.380nC @ 32.5V | 47pF @ 32.5V | - | Surface Mount | Die | |
| EPC8002ENGR | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | - | Surface Mount | Die | |
| EPC8009TENGR | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 65V | 4.1A (Tc) | 138 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.380nC @ 32.5V | 47pF @ 32.5V | - | Surface Mount | Die | |
| EPC8005TENGR | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 65V | 2.9A (Ta) | 275 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.218nC @ 32.5V | 29pF @ 32.5V | - | Surface Mount | Die | |
| EPC8002TENGR | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.141nC @ 32.5V | 21pF @ 32.5V | - | Surface Mount | Die |
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