650V,Drain to Source Voltage (Vdss)
415 mOhm @ 4A,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
2N7635-GA GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 650V 4A (Tc) (165°C) 415 mOhm @ 4A - - 324pF @ 35V 7W Through Hole TO-257-3
2N7636-GA GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 650V 4A (Tc) (165°C) 415 mOhm @ 4A - - 324pF @ 35V 7W Surface Mount TO-276AA