Specification
FET Type Silicon Carbide, Normally Off
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) (165°C)
Rds On (Max) @ Id, Vgs 415 mOhm @ 4A
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 324pF @ 35V
Power - Max 7W
Mounting Type Surface Mount
Package / Case TO-276AA