60V,Drain to Source Voltage (Vdss)
115nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NDP7060 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 75A (Tc) 13 mOhm @ 40A, 10V 4V @ 250µA 115nC @ 10V 3600pF @ 25V 150W Through Hole TO-220-3
ATP302-TL-H ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 70A (Ta) 13 mOhm @ 35A, 10V - 115nC @ 10V 5400pF @ 20V 70W Surface Mount ATPAK (2 leads+tab)
AOT262L ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 60V 20A (Ta), 140A (Tc) 3 mOhm @ 20A, 10V 3.2V @ 250µA 115nC @ 10V 9800pF @ 30V 2.1W Through Hole TO-220-3
AOB262L ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 60V 20A (Ta), 140A (Tc) 2.8 mOhm @ 20A, 10V 3.2V @ 250µA 115nC @ 10V 9800pF @ 30V 2.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NDB7060 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 75A (Tc) 13 mOhm @ 40A, 10V 4V @ 250µA 115nC @ 10V 3600pF @ 25V 150W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUP53P06-20-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 9.2A (Ta), 53A (Tc) 19.5 mOhm @ 30A, 10V 3V @ 250µA 115nC @ 10V 3500pF @ 25V 3.1W Through Hole TO-220-3
SUP53P06-20-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 9.2A (Ta) 19.5 mOhm @ 30A, 10V 3V @ 250µA 115nC @ 10V 3500pF @ 25V 3.1W Through Hole TO-220-3
SUM55P06-19L-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 55A (Tc) 19 mOhm @ 30A, 10V 3V @ 250µA 115nC @ 10V 3500pF @ 25V 3.75W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB