Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Rds On (Max) @ Id, Vgs 19 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 115nC @ 10V
Input Capacitance (Ciss) @ Vds 3500pF @ 25V
Power - Max 3.75W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB