Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta)
Rds On (Max) @ Id, Vgs 19.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 115nC @ 10V
Input Capacitance (Ciss) @ Vds 3500pF @ 25V
Power - Max 3.1W
Mounting Type Through Hole
Package / Case TO-220-3