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60V,Drain to Source Voltage (Vdss)

1.1A (Ta),Current - Continuous Drain (Id) @ 25°C

10 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

ZVN4306AV DIODES INC

MOSFET N-Channel, Metal Oxide 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 850mW Through Hole TO-226-3, TO-92-3 (TO-226AA)

ZVN4306A DIODES INC

MOSFET N-Channel, Metal Oxide 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 850mW Through Hole TO-226-3, TO-92-3 (TO-226AA)

ZVN4306ASTOA DIODES INC

MOSFET N-Channel, Metal Oxide 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 850mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

ZVN4306ASTOB DIODES INC

MOSFET N-Channel, Metal Oxide 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 850mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

ZVN4306ASTZ DIODES INC

MOSFET N-Channel, Metal Oxide 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 850mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

ZVN4306AVSTOA DIODES INC

MOSFET N-Channel, Metal Oxide 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 850mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

ZVN4306AVSTOB DIODES INC

MOSFET N-Channel, Metal Oxide 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 850mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

ZVN4306AVSTZ DIODES INC

MOSFET N-Channel, Metal Oxide 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 850mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

IRFD9014PBF VISHAY SILICONIX

MOSFET P-Channel, Metal Oxide 60V 1.1A (Ta) 500 mOhm @ 660mA, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 1.3W Through Hole 4-DIP (0.300", 7.62mm)

IRFD9014 VISHAY SILICONIX

MOSFET P-Channel, Metal Oxide 60V 1.1A (Ta) 500 mOhm @ 660mA, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 1.3W Through Hole 4-DIP (0.300", 7.62mm)

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
ZVN4306AV	DIODES INC	MOSFET N-Channel, Metal Oxide	60V	1.1A (Ta)	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	850mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
ZVN4306A	DIODES INC	MOSFET N-Channel, Metal Oxide	60V	1.1A (Ta)	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	850mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
ZVN4306ASTOA	DIODES INC	MOSFET N-Channel, Metal Oxide	60V	1.1A (Ta)	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	850mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ZVN4306ASTOB	DIODES INC	MOSFET N-Channel, Metal Oxide	60V	1.1A (Ta)	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	850mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ZVN4306ASTZ	DIODES INC	MOSFET N-Channel, Metal Oxide	60V	1.1A (Ta)	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	850mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ZVN4306AVSTOA	DIODES INC	MOSFET N-Channel, Metal Oxide	60V	1.1A (Ta)	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	850mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ZVN4306AVSTOB	DIODES INC	MOSFET N-Channel, Metal Oxide	60V	1.1A (Ta)	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	850mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ZVN4306AVSTZ	DIODES INC	MOSFET N-Channel, Metal Oxide	60V	1.1A (Ta)	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	850mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
IRFD9014PBF	VISHAY SILICONIX	MOSFET P-Channel, Metal Oxide	60V	1.1A (Ta)	500 mOhm @ 660mA, 10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	1.3W	Through Hole	4-DIP (0.300", 7.62mm)
IRFD9014	VISHAY SILICONIX	MOSFET P-Channel, Metal Oxide	60V	1.1A (Ta)	500 mOhm @ 660mA, 10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	1.3W	Through Hole	4-DIP (0.300", 7.62mm)

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