Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Rds On (Max) @ Id, Vgs 330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max 850mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads