| FET Type | MOSFET P-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 660mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 270pF @ 25V |
| Power - Max | 1.3W |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300", 7.62mm) |
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