560V,Drain to Source Voltage (Vdss)
2400pF @ 25V,Input Capacitance (Ciss) @ Vds
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPP21N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 208W Through Hole TO-220-3
SPW21N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 208W Through Hole TO-247-3
SPB21N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 208W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPA21N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 34.5W Through Hole TO-220-3 Full Pack
SPI21N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 208W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA