Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 560V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Gate Charge (Qg) @ Vgs 95nC @ 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max 208W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB