MOSFET, N, 500V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:208W; Transistor Case Style:TO-247; No. of Pins:3; Operating Temperature
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 560V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Gate Charge (Qg) @ Vgs 95nC @ 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max 208W
Mounting Type Through Hole
Package / Case TO-247-3