30V,Drain to Source Voltage (Vdss)
2320pF @ 15V,Input Capacitance (Ciss) @ Vds
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMS8674 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 17A (Ta), 21A (Tc) 5 mOhm @ 17A, 10V 3V @ 250µA 37nC @ 10V 2320pF @ 15V 2.5W Surface Mount 8-PQFN, Power56
SI4435DYPBF INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4435DYTRPBF INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4435DYTR INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4435DY INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI5429DU-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 11.8A (Ta), 12A (Tc) 15 mOhm @ 7A, 10V 2.2V @ 250µA 63nC @ 10V 2320pF @ 15V 31W Surface Mount -