Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11.8A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs 15 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 63nC @ 10V
Input Capacitance (Ciss) @ Vds 2320pF @ 15V
Power - Max 31W
Mounting Type Surface Mount
Package / Case -