Single P-Channel 30 V 2.5 W 40 nC Hexfet Power Mosfet Surface Mount - SOIC-8
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Rds On (Max) @ Id, Vgs 20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) @ Vds 2320pF @ 15V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)