30V,Drain to Source Voltage (Vdss)
3.3 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF6607TR1 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 27A (Ta), 94A (Tc) 3.3 mOhm @ 25A, 10V 2V @ 250µA 75nC @ 4.5V 6930pF @ 15V 3.6W Surface Mount -
IRFH7932TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 24A (Ta), 104A (Tc) 3.3 mOhm @ 25A, 10V 2.35V @ 100µA 51nC @ 4.5V 4270pF @ 15V 3.1W Surface Mount 8-PowerVDFN
IRFH7932TR2PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 24A (Ta), 104A (Tc) 3.3 mOhm @ 25A, 10V 2.35V @ 100µA 51nC @ 4.5V 4270pF @ 15V 3.1W Surface Mount 8-PowerVDFN
IRF6607 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 27A (Ta), 94A (Tc) 3.3 mOhm @ 25A, 10V 2V @ 250µA 75nC @ 4.5V 6930pF @ 15V 3.6W Surface Mount -
PSMN3R4-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 3.3 mOhm @ 25A, 10V 2.15V @ 1mA 64nC @ 10V 3907pF @ 15V 114W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK653R3-30C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 3.3 mOhm @ 25A, 10V 2.8V @ 1mA 114nC @ 10V 6960pF @ 25V 204W - -
PH3330L,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tc) 3.3 mOhm @ 25A, 10V 2.15V @ 1mA 30.5nC @ 4.5V 4840pF @ 12V 62.5W Surface Mount SC-100, SOT-669, 4-LFPAK
BUK652R7-30C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 3.3 mOhm @ 25A, 10V 2.8V @ 1mA 114nC @ 10V 6960pF @ 25V 204W Through Hole TO-220-3