Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tmb)
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs 114nC @ 10V
Input Capacitance (Ciss) @ Vds 6960pF @ 25V
Power - Max 204W
Mounting Type -
Package / Case -