Transistor: N-MOSFET; unipolar; 30V; 104A; 3.4W; P
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) @ Vgs 51nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4270pF @ 15V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN