30V,Drain to Source Voltage (Vdss)
18 mOhm @ 10A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN3030LFG-7 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 5.3A (Ta) 18 mOhm @ 10A, 10V 2.1V @ 250µA 17.4nC @ 10V 751pF @ 10V 900mW Surface Mount 8-PowerVDFN
SI7121DN-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 16A (Tc) 18 mOhm @ 10A, 10V 3V @ 250µA 65nC @ 10V 1960pF @ 15V 52W Surface Mount PowerPAK® 1212-8
SI4835DDY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 13A (Tc) 18 mOhm @ 10A, 10V 3V @ 250µA 65nC @ 10V 1960pF @ 15V 5.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4835DDY-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 8.7A (Ta), 13A (Tc) 18 mOhm @ 10A, 10V 3V @ 250µA 65nC @ 10V 1960pF @ 15V 5.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4916DY-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 10A, 10.5A 18 mOhm @ 10A, 10V 3V @ 250µA 10nC @ 4.5V - 3.3W, 3.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4814BDY-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 10A, 10.5A 18 mOhm @ 10A, 10V 3V @ 250µA 10nC @ 4.5V - 3.3W, 3.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4814BDY-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 10A, 10.5A 18 mOhm @ 10A, 10V 3V @ 250µA 10nC @ 4.5V - 3.3W, 3.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4916DY-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 10A, 10.5A 18 mOhm @ 10A, 10V 3V @ 250µA 10nC @ 4.5V - 3.3W, 3.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)