MOSFET, P, PPAK1212; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:25V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Operating Temperatu
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Rds On (Max) @ Id, Vgs 18 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) @ Vds 1960pF @ 15V
Power - Max 52W
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8