Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A, 10.5A
Rds On (Max) @ Id, Vgs 18 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 10nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 3.3W, 3.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)