| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB10SLT12-220 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 10A | 2V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 520pF @ 1V, 1MHz | 0.8°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| GB10SLT12-252 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 10A | 2V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 520pF @ 1V, 1MHz | 0.8°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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