Diode Type | Silicon Carbide Schottky |
Reverse DC Voltage(Vr) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 10A |
Forward Voltage (Vf) | 2V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Reverse Leakage Current @ Vr | 40µA @ 1200V |
Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
Thermal Resistance | 0.8°C/W Jc |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |